Comparison ledger
KLA 2135 and KLA Alpha Step D 300 Stylus, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | 2135KLA | |
|---|---|---|
| OEM | KLA | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA 2135 | KLA Alpha Step |
| Specifications | ||
| Product type | wafer inspection system[1] | — |
| Technology | advanced sensor and image processing technologies[1] | — |
| Inspection method | brightfield, small-pixel, high data rate, digital image processing technology[1] | — |
| Defect detection | detects all types of yield-relevant defects on all process layers[1] | — |
| Operational use | in-line monitoring of advanced processes[1] | — |
| Throughput | two- to three-times throughput improvement over the earlier model KLA 2132[1] | — |
| Configuration | — | Issue with the style module[2] |
| Instrument type | — | Stylus-based surface profiler[3] |
| Stylus tip radius | — | 2 µm[3] |
| Step height measurement range | — | 50 nm to 300 µm[3] |
| Measurement principle | — | Stylus placed in contact with and dragged along the substrate surface; vertical deflection measures change in step height[3] |
| Supported substrate types | — | Silicon, Silicon Germanium, Quartz, Sapphire, Glass, Germanium, Silicon Carbide, Gallium Nitride, III-V, Gallium Arsenide, Polymer, Carbon Polymer Based, Lithium Niobate[3] |
| Supported substrate sizes | — | Pieces, 2 inch, 3 inch, 4 inch, 6 inch wafer[3] |
| Maximum load | — | 1[3] |
| Cleanliness | — | Flexible[3] |
| Stylus scan distance used in roughness testing | — | 3 mm[4] |
| Manufacturer location | — | KLA-Tencor Corporation, Milpitas, CA[4] |
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