Comparison ledger
Lam Research 2300 Exelan Flex 45 Dielectric, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Exelan Flex 45 DielectricLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | With 12 gas lines[1] | — |
| Gas lines | 12[1] | — |
| Gases | C4F8, CF4, O2, Ar, CO, CO2, O2, CHF3, HBr, N2, SF6, H2[1] | — |
| Chamber | Single chamber with homemade manual load lock[1] | — |
| Plasma technology | High-density plasma[2] | — |
| Manufacturer | Lam Research[2] | — |
| Platform | 2300 Exelan Flex 45[2] | — |
| Wafer format | 300mm[2] | — |
| Equipment type | Dielectric plasma etch system[2] | — |
| Process technology | Dual Frequency Confined plasma with multi-frequency RF[2] | — |
| Chamber configuration | Single chamber with homemade manual load lock[1] | — |
| RF generator status | 27MHz RF generator not working[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
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