Comparison ledger
Lam Research 490, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 490Lam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 490 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Tool type | Auto Etcher[2] | — |
| Process type | Plasma etcher[3] | — |
| Wafer size | 4"~6"[3] | — |
| Wafer size range | 3-inch to 6-inch wafers[4] | — |
| Wafer handling | Cassette-to-cassette automatic wafer handling[3] | — |
| Processing mode | Single-wafer processing[4] | — |
| Load lock | Vacuum load locked[4] | — |
| Control | Fully automated microprocessor control[4] | — |
| Electrode spacing | Programmable, variable electrode spacing[4] | — |
| Endpoint detection | Included[4] | — |
| Wafer size (typical) | 4"~6"[3] | — |
| Chamber architecture | Double airlock structure, vacuum load locked[3] | — |
| RF generator | Included[3] | — |
| Process gas control | Multiple process gas lines with MFC control[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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