Comparison ledger
Lam Research 9600 TCP Metal, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 9600 TCP MetalLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research TCP 9600 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | with 3 HALO generators[2] | — |
| Plasma source | Transformer Coupled Plasma (TCP)[3] | — |
| Wafer size compatibility | 6-inch (150mm) and 8-inch (200mm)[3] | — |
| Chuck type | Ceramic ESC with helium backside cooling[3] | — |
| Endpoint control | Optical Emission Spectroscopy (OES)[3] | — |
| Automation interface | SECS/GEM Protocol[3] | — |
| Process chamber | Anodized aluminum, quartz-lined[3] | — |
| Typical etch targets | Al, TiN, Cu, W, Oxide, Nitride, Poly[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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