Comparison ledger
Lam Research AutoEtch 480, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AutoEtch 480Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | Plasma etch | — |
| Introduced | 1981 | — |
| Production run | 1981– | — |
| Lifecycle | — | — |
| Lifecycle milestones | 1981 Product introduction · 1982 First system sold · 1982 First sale | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 480 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Type | automated polysilicon plasma etcher[1] | — |
| Etch type | Plasma etch (polysilicon)[1] | — |
| Automation level | Automated[1] | — |
| Process | Polysilicon plasma etch[1] | — |
| Automation | Automated[1] | — |
| System type | in-line, cassette-to-cassette, fully automated, single wafer, planar etching system[2] | — |
| Process modes | PPE-Planar Plasma Etching; RIE-Reactive Ion Etching (optional)[2] | — |
| Throughput | 30-60 wafers/hour[2] | — |
| Wafer size | 3 in., 100mm, or 125mm[2] | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
| Etch rate | greater than 3,000 A/min[2] | — |
| Uniformity | better than ± 5% across wafer[2] | — |
| RF power supply | 500 watts, automatically stabilized; 3.56 MHz, crystal controlled; 52 ohms output impedance[2] | — |
| Facility power | 208 VAC, 3 phase, 5 wire, 20 amps, 50/60 Hz[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →