Comparison ledger
Lam Research Concept Two Speed, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Concept Two SpeedLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Concept Two | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Configuration | 1 Shrink chamber[3] | — |
| Manufacturer | Lam Research[4] | — |
| Configuration option | Shrink chamber[4] | — |
| Asset # | 68566[3] | — |
| Make | Lam / Novellus[3] | — |
| Model | Concept Two Speed[3] | — |
| Process type | Etch chamber[1] | — |
| Platform | Novellus Concept Two platform[1] | — |
| Voltage | 208 VAC[1] | — |
| Phase | 3 phase[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Type | Chamber Only[1] | — |
| Full load current | 21 A[1] | — |
| Main breaker rating | 25 A[1] | — |
| Largest load | 8 A[1] | — |
| Intended wafer size | 8 inch[5] | — |
| Wafer shape | Notch[5] | — |
| SMIF interface | Yes[5] | — |
| Chamber configuration | 1 shrink chamber; 1 standard chamber[3] | — |
| Largest load current | 8 A[1] | — |
| Interrupt current | 10 KA[1] | — |
| Vintage | 2010[1] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[2] |
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