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Comparison ledger

SEZ SP 203 Spinversus110

Lam Research SEZ SP 203 Spin, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
SEZ SP 203 SpinLam Research
110Tegal
OEMLam ResearchTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research SEZ SP 203Tegal 110
Cited variants—
Specifications
Configuration50/60 Hz[2]—
Voltage400 VAC[2]—
Max. Current32 A[2]—
Breaking Capacity10.000 AIC[2]—
Power400V, 50 Hz, 3-Phase[3]—
PhaseENI VL-400 Phase Shift Controller[3]—
Roughing Pump CodeA532-80-905[3]—
OEMLam Research[4]—
ModelSEZ SP 203 Spin[2]—
CategoryEtch[4]—
Tool typeSpin etcher[4]—
Wafer size150mm[5]—
Vintage1999[5]—
Process pump statusProcess pump in one chemical cabinet (sub tool) has malfunction[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[6]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[6]
Physical description—compact[1]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com
  5. [5]csisemi.comcsisemi.com
  6. [6]waferpedia.comwaferpedia.com