Comparison ledger
Oxford Instruments 100 ICP Fluorine, Oxford Instruments Ionfab 300 Plus IBD IBE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Ionfab 300 Plus IBD IBEOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Oxford Instruments Ionfab 300 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | 6 to 8 inch wafers[3] |
| Phase | — | 3 Phase[2] |
| Configuration | — | Loadlock and robot with secondary pumping, Vacuum can remain inside for higher throughput.[2] |
| Process type | — | Ion beam deposition / ion beam etching[3] |
| Power & electrical | — | 3 phase[3] |
| Vacuum & pumping | — | Loadlock and robot with secondary pumping; vacuum can remain inside for higher throughput[3] |
| Configuration / options | — | Able to add another chamber if necessary[2] |
| Analytical feature | — | SIMS mass spectrometry[2] |
| Manufacturer | — | Oxford Instruments[2] |
| Model | — | Ionfab 300 Plus[2] |
| Vacuum / throughput | — | Vacuum can remain inside for higher throughput[3] |
| Configuration option | — | Able to add another chamber if necessary[2] |
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