Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm Versaline LACVD, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Versaline LACVDPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Versaline |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | 6 inch[2] |
| Configuration | — | 2x loadlock Ports[2] |
| Operating system | — | Windows 7 Professional SP1 OS[2] |
| Tool software | — | Plasma-Therm Cortex[2] |
| OES Software | — | Plasma-Therm EndpointWorks[2] |
| Manufacturer | — | Plasma-Therm[2] |
| Model | — | Versaline[2] |
| Loadlock ports | — | 2x loadlock Ports[2] |
| Process chambers | — | 2x Process Chambers[2] |
| Gas delivery | — | CF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[2] |
| ICP source | — | 2 MHz up to 2000 W with temperature control[2] |
| Substrate temperature control | — | via bipolar Johnsen-Rahbek electrostatic chuck[2] |
| Backside cooling | — | With backside Helium cooling[2] |
| CCP source | — | 13.56 MHz up to 600 W[2] |
| Vacuum/pumping | — | thermally managed chamber liner and pump train[2] |
| Process monitoring | — | Optical emission spectroscopy[2] |
| DMC/OCR reader | — | configured for DMC[2] |
| Category | — | Etch[3] |
| Optics | — | optical emission spectroscopy[2] |
| Gas configuration | — | CF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[2] |
| Gas abatement interface | — | present[2] |
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