Plasma-Therm
Versaline LACVD
The Plasma-Therm Versaline LACVD is an etch system for 6-inch wafers. The Plasma-Therm Versaline LACVD has 2 loadlock ports and 2 process chambers. The Plasma-Therm Versaline LACVD uses an ICP source at 2 MHz up to 2000 W and a CCP source at 13.56 MHz up to 600 W.[1][2][3]
Power
CCP source 13.56 MHz up to 600 W[1]
Gas delivery
CF4 (84 sccm)[1]
Optics
Optical emission spectroscopy[1]
What it is
General reference — not yet source-verifiedAn etch system is semiconductor process equipment that removes material from a wafer in selected areas after pattern definition. Etch systems are used after film formation and lithography to transfer patterns into underlying layers. Dry etch tools use reactive gases and plasma inside a vacuum chamber to shape features with controlled material removal.
How it works
The Plasma-Therm Versaline LACVD is configured with an ICP source at 2 MHz up to 2000 W with temperature control and a CCP source at 13.56 MHz up to 600 W. The Plasma-Therm Versaline LACVD provides substrate temperature control through a bipolar Johnsen-Rahbek electrostatic chuck. The Plasma-Therm Versaline LACVD uses backside helium cooling. The Plasma-Therm Versaline LACVD includes optical emission spectroscopy. The Plasma-Therm Versaline LACVD includes a thermally managed chamber liner and pump train.[1][2][3]
Where it fits in the process flow
General reference — not yet source-verifiedEtch tools are placed after lithography or after hard-mask definition when a patterned resist or mask is available on the wafer. Etch then transfers that pattern into deposited or grown films and prepares the structure for later stripping, cleaning, deposition, or further patterning. Multi-chamber dry etch equipment is commonly integrated where repeatable vacuum processing and controlled wafer handling are needed between incoming patterned wafers and downstream post-etch steps.
What do the numbers mean?
Power & electrical4
Vacuum & pumping2
- thermally managed chamber liner and pump train[1]
Wafer handling5
Gas & chemistry11
- Gases and maximum flows in positions 1 to 8 respectively are:[1]
- CF4 (84 sccm)[1]
- O2 (1000 sccm)[1]
- Ar (50 sccm)[1]
- O2 (50 sccm)[1]
- CHF3 (100 sccm)[1]
- N2 (200 sccm)[1]
- H2 (100 sccm)[1]
- Gas delivery
- CF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[1]
- Gas configuration
- CF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[1]
Optics & imaging2
Control & software3
Configuration & options13
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- ConfigurationGases and maximum flows in positions 1 to 8 respectively are:[1]
- ConfigurationCF4 (84 sccm)[1]
- ConfigurationO2 (1000 sccm)[1]
- ConfigurationAr (50 sccm)[1]
- ConfigurationO2 (50 sccm)[1]
- ConfigurationCHF3 (100 sccm)[1]
- ConfigurationN2 (200 sccm)[1]
- ConfigurationH2 (100 sccm)[1]
- ConfigurationICP source 2 MHz up to 2000 W with temperature control[1]
- ConfigurationCCP source 13.56 MHz up to 600 W[1]
- Configurationthermally managed chamber liner and pump train[1]
- Gas deliveryCF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[1]
- ICP source2 MHz up to 2000 W with temperature control[1]
- CCP source13.56 MHz up to 600 W[1]
- Vacuum/pumpingthermally managed chamber liner and pump train[1]
- Gas configurationCF4 (84 sccm), O2 (1000 sccm), He (50 sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm), H2 (100 sccm)[1]
- Gas abatement interfacepresent[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What wafer size does the Plasma-Therm Versaline LACVD support?
The Plasma-Therm Versaline LACVD is configured for 6 inch wafers.[1][2][3]
How many loadlocks and process chambers does the Plasma-Therm Versaline LACVD have?
The Plasma-Therm Versaline LACVD has 2 loadlock ports and 2 process chambers.[1][2][3]
Not publicly documented
The following facts about the Versaline LACVD are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Versaline LACVD are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Versaline LACVD are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Versaline LACVD are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Versaline LACVD are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Versaline LACVD is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]Plasmatherm Versaline LACVD Etch System | SemiStar — semistarcorp.comsemistarcorp.com
Last updated Oct 17, 2026.
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