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Comparison ledger

CKX 1000 Ion Beamversus110

Oxford Instruments CKX 1000 Ion Beam, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
CKX 1000 Ion BeamOxford Instruments
110Tegal
OEMOxford InstrumentsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments CKX 1000 Ion BeamTegal 110
Cited variants—
Specifications
ConfigurationIncludes Turbo molecular pump & Edwards backing pump[2]—
ManufacturerOxford Instruments[3]—
ModelCKX 1000 Ion Beam[3]—
CategoryEtch[3]—
Ion source11 cm ion source[3]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com