Waferpedia

Comparison ledger

PECVD3 versus Plasmalab 100

Oxford Instruments PECVD3 and Oxford Instruments Plasmalab 100, side by side. Every value shown is drawn from its cited encyclopedia entry.

Side-by-side comparison of selected equipment models
Attribute
PECVD3Oxford Instruments
Plasmalab 100Oxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryDepositionDeposition
Wafer size
Process node
Introduced
Production run
Lifecycle
Lifecycle milestones
Control system
Generation
FamilyOxford Instruments PECVD3Oxford Instruments Plasmalab 100
Cited variants
  • System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system[1]
Specifications
OEMOxford Instruments[2]
ModelPECVD3[2]
Equipment listingOxford Plasmalab System 100 PECVD System[2]
Process manual referencePECVD Overview from Oxford Instruments[3]
Dry pumpEdwards QDP 40[4]
System ControlHP PC System, Windows XP[4]
Voltage208 VAC, 3 Phase[4]
Full Load25 A[4]
ConfigurationGas Box:[4]
Gas 1MKS 1479 A, 5% SiH4 / N2, 1000 SCCM[4]
Gas 2MKS 1479 A, NH3, 100 SCCM[4]
Gas 3MKS 1179 A, N2, 2000 SCCM[4]
Gas 4MKS 1179 A, N2O, 3000 SCCM[4]
Gas 5MKS 1179 A, ,O2, 300 SCCM[4]
Gas 6MKS 1179 A, Ar, 500 SCCM (TEOS carrier gas)[4]
TEOS ThermotankThermocenter salvis lab[4]
Chuckφ202 mm( φ2’, φ4’, φ6’, φ8’)[4]
Shower headφ225 mm[4]
RF GeneratorAE RFX 600 A[4]
Match BoxOPT AMU Oxford[4]
LF GeneratorAE LF-5[4]

Plan your fab

Building a Deposition process? Get a complete equipment list.

Open the fab equipment planner →
Sources (4)Every fact above is drawn from these public sources
  1. [1]uwaterloo.cauwaterloo.ca
  2. [2]nanolab.berkeley.edunanolab.berkeley.edu
  3. [3]nanolab.berkeley.edunanolab.berkeley.edu
  4. [4]inventory listing