Comparison ledger
Plasma-Therm 790 + RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 790 + RIEPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm 790 + RIE | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Process type | Reactive ion etcher / reactive ion etch system[2] | — |
| Configured for | RIE (Reactive Ion Etching) processing of silicon substrates[3] | — |
| Maximum wafer size | 200 mm[4] | — |
| Platen size | 279 mm[4] | — |
| Platen/sample table | 6" water cooled sample table[5] | — |
| RF power supply | 500 W RF power supply[5] | — |
| RF generator | 500W RF generator[6] | — |
| RF frequency | 13.56 MHz[6] | — |
| Electrodes | 240 mm diameter[6] | — |
| Chamber | Non load-locked chamber[6] | — |
| Gas delivery | Shower head gas delivery system[6] | — |
| Gas channels | Six MFC gas channels[6] | — |
| Process gases | SF6, CHF3, CF4, oxygen (O2), argon (Ar); previous gases also listed as AR, N2, O2, SF6, CHF3, CF4[4] | — |
| Pressure range | < 900 mTorr[4] | — |
| Power range | < 350 W[4] | — |
| Vacuum system | Turbo pumped vacuum system with roughing pump[6] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[7] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[7] |
| Physical description | — | compact[1] |
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