Comparison ledger
Plasma-Therm Unaxis 790 RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Unaxis 790 RIEPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Unaxis 790 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Gases:[2] | — |
| Wafer size | 6 inch[2] | — |
| Process gases | SF6, CHF3, CF4, O2, He, Ar, N2[2] | — |
| RF source frequency | 13.56 MHz[2] | — |
| Tool type | Reactive Ion Etcher (RIE)[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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