Comparison ledger
Plasma-Therm Versaline ICP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Versaline ICPPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Versaline ICP | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Configuration | 4 Process Modules[3] | — |
| RF Power Supply | 500 W[4] | — |
| Wafer Size | 4" wafers or smaller samples mounted to 4" carrier wafers[4] | — |
| Gases Available | Cl2, BCl3, Ar, O2[4] | — |
| ICP Source Frequency | 2MHz[1] | — |
| Substrate Bias Frequency | 13.56MHz (optional 40MHz)[1] | — |
| Substrate Temperature Control | Backside helium cooling with mechanical or electrostatic clamping[1] | — |
| Control System | Cortex control system with EndpointWorks[1] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[2] |
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