Comparison ledger
SPTS APS and SPTS CET25, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | APSSPTS | CET25SPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | — | 25-wafer batch |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS APS | SPTS CET25 |
| Specifications | ||
| System type | ICP-based high density plasma source[1] | — |
| Optimization target | Dielectric etching[1] | — |
| Processing mode | Single wafer processing[1] | — |
| Clamping | Electrostatic clamping[1] | — |
| End-point detection | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[1] | — |
| Gases available | O2, Ar, CHF3, He, C4F8, SF6, H2[1] | — |
| Process type | — | HF vapor release etch for MEMS[2] |
| Batch size | — | 25-wafer batch[2] |
| Target application | — | Medium to high volume production applications[2] |
| Key benefits | — | High throughput; process chamber, gas and liquid panel, and pressure control components within a small footprint; extensive process control and monitoring functions[2] |
| Configuration support | — | Various SPTS cluster configurations with the ability to support multiple process modules[2] |
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