Comparison ledger
SPTS CET25 and SPTS Synapse, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | CET25SPTS | SynapseSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Etch | Etch |
| Wafer size | 25-wafer batch | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS CET25 | SPTS Synapse |
| Specifications | ||
| Process type | HF vapor release etch for MEMS[1] | — |
| Batch size | 25-wafer batch[1] | — |
| Target application | Medium to high volume production applications[1] | — |
| Key benefits | High throughput; process chamber, gas and liquid panel, and pressure control components within a small footprint; extensive process control and monitoring functions[1] | — |
| Configuration support | Various SPTS cluster configurations with the ability to support multiple process modules[1] | — |
| Plasma source | — | ICP-based high density plasma source[2] |
| Dedicated materials | — | Etching of SiO2 and SixNy layers[2] |
| Wafer handling | — | Loadlock/chamber transfers for single wafer processing[2] |
| Clamp type | — | Electrostatic clamping[2] |
| Endpoint detection | — | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[2] |
| Gases available | — | O2, Ar, He, H2, SF6, C4F8, CF4, CHF3[2] |
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