Comparison ledger
STS ICP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ICPSTS | 110Tegal |
|---|---|---|
| OEM | STS | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | STS ICP | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Voltage | 400 V[4] | — |
| Frequency | 50 Hz[4] | — |
| Technology | Inductively Coupled Plasma (ICP)[4] | — |
| Tool type | Inductively coupled plasma etcher[4] | — |
| Electrical configuration | 400 V, 50 Hz[4] | — |
| Process class | Dry etcher[2] | — |
| Wafer size | 100 mm wafers[2] | — |
| Chemistry | Chlorine and bromine chemistry[2] | — |
| Power | 400 V[4] | — |
| model | — | 110 SE[3] |
| application focus | — | process development applications[3] |
| process capability | — | deep silicon plasma etching[3] |
| capabilities | — | very high aspect ratio trench etch and profile control[3] |
| configuration | — | multiple configurations with minimum technical intervention[3] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[3] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[3] |
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