Comparison ledger
Tegal 110, Tegal 901, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | 901Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tegal 901 |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Configuration | — | Poly[3] |
| Wafer size | — | 3 inch, 100 mm to 150 mm[5] |
| Primary process | — | non-critical silicon nitride and photoresist trim[5] |
| Reactor type | — | wide gap RF diode reactor[5] |
| Temperature regime | — | low temperature plasma etch[5] |
| Wafer handling | — | no wafer clamps or electrostatic chucks[5] |
| Additional process | — | poly etching[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →