Comparison ledger
Tegal 110, Tokyo Electron TE 8500 P Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | TE 8500 P DryTokyo Electron |
|---|---|---|
| OEM | Tegal | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tokyo Electron TE 8500 |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Configuration | — | 1 chamber[3] |
| Gas | — | CF4, CHF3, He[3] |
| Wafer size | — | 6 inch[4] |
| Chamber count | — | 1[3] |
| Application | — | Oxide etch with endpoint[3] |
| Process gases | — | CF4, CHF3, He[3] |
| Operating system | — | EPROM based[3] |
| Pump | — | 2ea, Kashiyama[3] |
| Vintage (reported) | — | 1996 (some units 1999)[4] |
| Etch Type | — | Oxide etch with end point[3] |
| Gases | — | CF4, CHF3, He[3] |
| Operating System | — | EPROM based system[3] |
| Pump Make | — | Kashiyama (2 units)[3] |
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