Comparison ledger
Tegal 110, Tokyo Electron TSP 305 SCCM SE+ Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | TSP 305 SCCM SE+ OxideTokyo Electron |
|---|---|---|
| OEM | Tegal | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tokyo Electron TSP 305 SCCM SE+ Oxide |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Vintage | — | 2006, 2007, 2008[3] |
| Wafer Size | — | 12"[4] |
| Carrier | — | FOUP (Comply with SEMI E47.1, 25 wafers)[4] |
| Interface | — | 5 Carrier stage (Continuous flow operation) with Semi compliant MENV and FIMS assemblies[4] |
| Process Chambers | — | 4 chambers, SCCM Oxide with Y2O3 coating[4] |
| End Point Detector | — | SE2000ii[4] |
| ESC Type | — | Ceramics ESC with STD Vpp[4] |
| Focus Ring | — | 3.4mm[4] |
| TMP | — | TMP-3403LMC-T4(VG300) (SHIMADZU)[4] |
| Dry Pump | — | ESR80WN, KEG approved[4] |
| APC | — | Pendulum Motion Dia., 320mm(VAT), R.T.~90deg[4] |
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