Comparison ledger
Tegal 110, Veeco RF 350 Ion Beam, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | RF 350 Ion BeamVeeco |
|---|---|---|
| OEM | Tegal | Veeco |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Veeco RF 350 Ion Beam |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Ion Source Diameter | — | 300 mm[3] |
| Ion Source Type | — | inductively coupled, filamentless RF[3] |
| Wafer Size | — | single 6" (150 mm)[3] |
| Substrate Loading | — | single-substrate loadlocked (or configurable to cassette-to-cassette)[3] |
| OEM | — | Veeco[4] |
| Model | — | RF 350[4] |
| Category | — | Etch[5] |
| Tool type | — | Ion Beam Etcher (IBE)[5] |
| Process modes | — | Ion Beam Etching (IBE) and Reactive Ion Beam Etching (RIBE)[3] |
| Ion source type | — | inductively coupled, filamentless RF ion source[5] |
| Loading | — | single 6" wafer loading[3] |
| Applications | — | MEMS, semiconductor fabrication, and data storage[3] |
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