Comparison ledger
Varian 0332 F 9453 302 Diffusion, YES 58 TA HMDS Vacuum Bake Vapor Prime, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | Varian | YES |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Varian 0332 F 9453 302 Diffusion | YES 58 |
| Specifications | ||
| Asset Number | 142841[1] | — |
| Last Confirm Date | October 14, 2025[2] | — |
| Make | Varian[1] | — |
| Model | 0332 F 9453 302[1] | 58 TA HMDS Vacuum Bake / Vapor Prime Oven[4] |
| Category | Thermal / Diffusion[3] | Thermal / Diffusion[5] |
| Tool type | diffusion pump[3] | — |
| Temperature | — | PID temperature controller, 25–200 °C with front panel readout[4] |
| Configuration | — | Chamber zone controlled for greater temperature uniformity[4] |
| Unit | — | 73.66 cm W × 62.23 cm D × 88.27 cm H (29″ × 24.5″ × 34.75″)[4] |
| Chamber | — | 40.64 cm W × 45.72 cm D × 40.64 cm H (16″ × 18″ × 16″)[4] |
| Capacity | — | 8 cassettes of 125 mm or 150 mm wafers ; 12 cassettes of 100 mm wafers[4] |
| OEM | — | YES[4] |
| Operation temperature | — | Ambient to 180 °C[6] |
| Batch throughput | — | 2 loads/hour vacuum bake/vapor prime; 1 load/hour image reversal[6] |
| Wafer size | — | Up to 300 mm[6] |
| Clean room compatibility | — | Class 10[7] |
| Cleanliness | — | <5 x 1 micron particles per 150 mm wafer[7] |
| Temperature uniformity | — | ±5 °C after stabilization[4] |
| Number of recipes | — | 8 process recipes[7] |
| Process gas inputs | — | 1 N2 vent gas, 1 ammonia, 1 vapor flask[7] |
| Chamber material | — | 316L stainless steel, aluminum door plate[7] |
| Overall system dimensions | — | 73.5 cm W x 62.56 cm D x 88.27 cm H[7] |
| Interior chamber dimensions | — | 40.64 cm W x 45.72 cm D x 40.64 cm H[7] |
| Power requirements | — | 188-253VAC, 50/60Hz, 10 amps[7] |
| Process variables | — | temperature, pressure, and 8 programmable recipes[4] |
| Wafer temperature uniformity | — | ±5 °C after stabilization[4] |
| Operating temperature | — | ambient to 180 °C[4] |
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