Comparison ledger
Zeiss Leo 1530 FE-SEM and Zeiss Orion NanoFab, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | Leo 1530 FE-SEMZeiss | Orion NanoFabZeiss |
|---|---|---|
| OEM | Zeiss | Zeiss |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Zeiss LEO | Zeiss Orion NanoFab |
| Specifications | ||
| Configuration | Four-Quadrant Backscattered Electron Detector (4QBSD)[1] | — |
| OXFORD 6901 EDX Detector with resolution | 133 eV at 5.9 KeV[1] | — |
| Determination area | 10 mm²[1] | — |
| Instrument type | — | Focused ion beam (FIB) microscope[2] |
| Functions | — | Ultrahigh-resolution imaging, direct writing, and lithography platform[2] |
| Beam species | — | Operates with either He or Ne[2] |
| He beam probe | — | ~0.5 nm[2] |
| He beam imaging performance | — | Produces sub-5 nm resolution images and patterns with large depth of field[2] |
| Ne beam application range | — | Direct write and lithography applications between 10 and 100 nm[2] |
| Sample capability | — | Non-conductive samples can be imaged with the aid of an electron flood gun[2] |
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