Comparison ledger
Zeiss Orion NanoFab and Zeiss Sigma HDVP, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | Orion NanoFabZeiss | Sigma HDVPZeiss |
|---|---|---|
| OEM | Zeiss | Zeiss |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Zeiss Orion NanoFab | Zeiss Sigma |
| Specifications | ||
| Instrument type | Focused ion beam (FIB) microscope[1] | — |
| Functions | Ultrahigh-resolution imaging, direct writing, and lithography platform[1] | — |
| Beam species | Operates with either He or Ne[1] | — |
| He beam probe | ~0.5 nm[1] | — |
| He beam imaging performance | Produces sub-5 nm resolution images and patterns with large depth of field[1] | — |
| Ne beam application range | Direct write and lithography applications between 10 and 100 nm[1] | — |
| Sample capability | Non-conductive samples can be imaged with the aid of an electron flood gun[1] | — |
| Acceleration voltage | — | 0.02 kV - 30 kV[2] |
| Magnification range | — | 10-1.000.000x[2] |
| Configuration | — | Electron source[2] |
| Specimen chamber | — | 358 mm[2] |
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