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0010-13622 RF Match forversusMark 40 C

Applied Materials 0010-13622 RF Match for, CHA Mark 40 C, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
OEMApplied MaterialsCHA
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forCHA Mark 40
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[1]CHA SR-10 E-Beam Power Supply (10kW)[2]
Model0010-13622[1]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[1]—
FeatureHigh Efficiency HE RF Match-Bias[1]—
Process Chamber Dimensions—26” x 26”[2]
Crucible—4 pockets, 15cc each[2]
Power—10kW Heater Power Supply (CHA HPS-671-10)[2]
Ion Gauge Tube—IG-100N[2]
Type—Evaporator[3]
Category—Deposition[3]
Power supply—CHA SR-10 E-Beam Power Supply (10kW)[2]
Electron beam source—CHA T271-4-1 Electron Beam Source[2]
Beam sweep controller—CHA Beam Sweep Controller[2]
Pump cycle controller—CHA Auto Tech-2 Pump Cycle Controller[2]
Substrate heat—Included[2]
Heater power supply—10kW Heater Power Supply (CHA HPS-671-10)[2]
Deposition rate controller—Sycon STC-200/SQ Deposition Rate Controller[2]
Vacuum gauge control—Granville Philips 307 Vacuum Gauge Control[2]
Pressure/flow controller—MKS Type 250 Pressure/Flow Controller[2]
Chillers—Neslab CFT-150 Chillers, Qty 2[2]
Compressor—CTI-Cryogenics 8500 Compressor[2]
Vacuum pump—Edwards E2M40 2-Stage Vacuum Pump[2]
Liquid nitrogen level control—Included[2]
Convectron tube—275-071[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com