Comparison ledger
Applied Materials 0010-13622 RF Match for, STS Multiplex, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | MultiplexSTS |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | STS Multiplex |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | Decomposition Capability:[2] |
| Model | 0010-13622[1] | Multiplex[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Category | — | Deposition[2] |
| Wafer size | — | 6 inch[2] |
| Film deposited | — | Silicon Nitride (Si3N4)[2] |
| Processing gases | — | Oxygen, Carbon Tetrafluoride (CF4), Silane, Nitrous Oxide, Ammonia[2] |
| Tool type | — | PE CVD[3] |
| Deposition type | — | Plasma-enhanced chemical vapor deposition (PECVD)[2] |
| Deposited films | — | Thin films such as oxide, nitride, and silicon[3] |
| Process gases | — | Oxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, ammonia[2] |
| Batch mode | — | Single or dual-wafer batch mode, no cassette operation[3] |
| Decomposition capability | — | Silicon dioxide (SiO2); silicon nitride (Si3N4)[2] |
| Make | — | STS[2] |
| Equipment type | — | PECVD (Plasma-Enhanced Chemical Vapor Deposition)[2] |
| Deposition films | — | oxide, nitride, Si carbide, a-Si, and P-doped a-Si films[3] |
| Deposition mode | — | single or dual-wafer batch mode[3] |
| Wafer or piece handling | — | works from pieces to 6-inch wafers[3] |
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