STS

Multiplex

Research Quality: 60% complete

The STS Multiplex PECVD is a plasma-enhanced chemical vapor deposition system for depositing thin films such as oxide, nitride, and silicon. The STS Multiplex PECVD operates in single or dual-wafer batch mode with no cassette operation. The STS Multiplex PECVD processes wafers up to 6 inches and supports silicon nitride (Si3N4) deposition using gases including oxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, and ammonia.^[1]^[2]

Multiplex — Inventory photo — Fig. 01MultiplexInventory photo^[1]

What it is

The STS Multiplex is a plasma-enhanced chemical vapor deposition system used for thin-film deposition in semiconductor processing.^[1]^[2]

How it works

In etch use, the STS Multiplex operates as an inductively coupled plasma reactor that supports dry etching with electrostatic clamping and process gases selected for the target material.^[3]^[4]

Where it fits in the process flow

General reference — not yet source-verified

The STS Multiplex sits in the thin-film deposition stage of the process flow when used as a PECVD tool, after substrate preparation and before later pattern transfer or interconnect steps.

The STS Multiplex also fits into the dry-etch portion of the flow when used as an ICP etcher, where it follows lithography and resist pattern definition and precedes strip or clean steps.

Why won't it start?

Documented failure modes, common issues, and field considerations.

No photoresist is allowed in this tool.
An etch-back recipe should be run after processing to clean the chamber.

What do the numbers mean?

Wafer handling4

Wafer size: 6 inch^[1]
Batch mode: Single or dual-wafer batch mode, no cassette operation^[2]
Deposition mode: single or dual-wafer batch mode^[2]
Wafer or piece handling: works from pieces to 6-inch wafers^[2]

Gas & chemistry5

Processing gases: Oxygen, Carbon Tetrafluoride (CF4), Silane, Nitrous Oxide, Ammonia^[1]
Deposition type: Plasma-enhanced chemical vapor deposition (PECVD)^[1]
Process gases: Oxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, ammonia^[1]
Tool type: PECVD (Plasma-Enhanced Chemical Vapor Deposition)^[1]
Equipment type: PECVD (Plasma-Enhanced Chemical Vapor Deposition)^[1]

Configuration & options16

Decomposition Capability:^[1]; Silicon Dioxide (SiO2); Silicon Nitride (Si3N4)^[1]; Processing Gasses:^[1]; Oxygen^[1]; Carbon Tetrafluoride (CF4)^[1]; Silane^[1]; Nitrous Oxide^[1]; Ammonia^[1]
Category: Deposition^[1]
Film deposited: Silicon Nitride (Si3N4)^[1]
Tool type: PE CVD^[2]
Deposited films: Thin films such as oxide, nitride, and silicon^[2]
Decomposition capability: Silicon dioxide (SiO2); silicon nitride (Si3N4)^[1]
Model: Multiplex^[1]
Make: STS^[1]
Deposition films: oxide, nitride, Si carbide, a-Si, and P-doped a-Si films^[2]

Interested in this tool?

Need help with this tool?Embed spec card

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Processing gasesOxygen, Carbon Tetrafluoride (CF4), Silane, Nitrous Oxide, Ammonia^[1]
Deposition typePlasma-enhanced chemical vapor deposition (PECVD)^[1]
Process gasesOxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, ammonia^[1]
Tool typePECVD (Plasma-Enhanced Chemical Vapor Deposition)^[1]
Equipment typePECVD (Plasma-Enhanced Chemical Vapor Deposition)^[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Worked with this tool? Help preserve its knowledge →

Frequently asked questions

What films does the STS Multiplex PECVD deposit?

The STS Multiplex PECVD deposits oxide, nitride, silicon carbide, amorphous silicon, and phosphorus-doped amorphous silicon films.^[2]

Can the STS Multiplex process pieces as well as wafers?

The STS Multiplex can work on pieces and on wafers up to six inches in size.^[2]

Not publicly documented

The following facts about the Multiplex are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Multiplex are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Multiplex are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Multiplex are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the Multiplex is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Multiplex are on record.
Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (5)Every fact above is drawn from these public sources

[1]Inventory photo
[2]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
[3]Etching ‒ Center of MicroNanoTechnology CMi ‐ EPFL — epfl.chepfl.ch
[4]STS Multiplex ICP RIE - Claire & John Bertucci Nanotechnology Laboratory - College of Engineering - Carnegie Mellon Univ — nanofab.ece.cmu.edunanofab.ece.cmu.edu
[5]Equipment List — nanofab.utah.edunanofab.utah.edu