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0010-13622 RF Match forversusBJD 2000

Applied Materials 0010-13622 RF Match for, Temescal BJD 2000, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
BJD 2000Temescal
OEMApplied MaterialsTemescal
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forTemescal BJD 2000
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[1]Batch loading vacuum chamber w/ 20" diameter hinged bell jar[2]
Model0010-13622[1]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[1]—
FeatureHigh Efficiency HE RF Match-Bias[1]—
With—Two sets of removable shields for cleaning[2]
E-Beam Controller—Inficon Model XTC/3[2]
Process Controller—CTI Model CT-8 Onboard[2]
Power—6 KW EBeam Power Supply[3]
Type—Batch-loading vacuum chamber evaporator[3]
Bell jar—20" diameter hinged bell jar[2]
Load-lock status—Non-load-locked[4]
Vacuum pumping—Roughing Pump[3]
Sources supported—Multiple electron beam and resistance sources[4]
Source-to-substrate distance—Standard 19.5"; optional source well extension collar 27.5"[4]
EBeam gun—STIH-270-2CK[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]temescal.ferrotec.comtemescal.ferrotec.com