Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Lam Research AutoEtch 480, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | AutoEtch 480Lam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | Plasma etch |
| Introduced | — | 1981 |
| Production run | — | 1981– |
| Lifecycle | — | — |
| Lifecycle milestones | — | 1981 Product introduction · 1982 First system sold · 1982 First sale |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Lam Research AutoEtch 480 |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | automated polysilicon plasma etcher[3] |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Etch type | — | Plasma etch (polysilicon)[3] |
| Automation level | — | Automated[3] |
| Process | — | Polysilicon plasma etch[3] |
| Automation | — | Automated[3] |
| System type | — | in-line, cassette-to-cassette, fully automated, single wafer, planar etching system[4] |
| Process modes | — | PPE-Planar Plasma Etching; RIE-Reactive Ion Etching (optional)[4] |
| Throughput | — | 30-60 wafers/hour[4] |
| Wafer size | — | 3 in., 100mm, or 125mm[4] |
| Etch rate | — | greater than 3,000 A/min[4] |
| Uniformity | — | better than ± 5% across wafer[4] |
| RF power supply | — | 500 watts, automatically stabilized; 3.56 MHz, crystal controlled; 52 ohms output impedance[4] |
| Facility power | — | 208 VAC, 3 phase, 5 wire, 20 amps, 50/60 Hz[4] |
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