Comparison ledger
Applied Materials 0010-16392 ESC Assembly, SPTS Synapse, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | SynapseSPTS |
|---|---|---|
| OEM | Applied Materials | SPTS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | SPTS Synapse |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Plasma source | — | ICP-based high density plasma source[3] |
| Dedicated materials | — | Etching of SiO2 and SixNy layers[3] |
| Wafer handling | — | Loadlock/chamber transfers for single wafer processing[3] |
| Clamp type | — | Electrostatic clamping[3] |
| Endpoint detection | — | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[3] |
| Gases available | — | O2, Ar, He, H2, SF6, C4F8, CF4, CHF3[3] |
| Gas flow rates | — | O2 0-200 sccm; Ar 0-140 sccm; He 0-500 sccm; H2 0-100 sccm; SF6 0-200 sccm; C4F8 0-60 sccm; CF4 0-50 sccm; CHF3 0-100 sccm[3] |
| Etch rate (SiO2) | — | 320 nm/min (with C4F8/H2/He chemistry and PR mask); 400 nm/min (with C4F8/H2/He chemistry and PR mask, APS_SiO2_PR_3:1 process)[3] |
| Etch rate (Si3N4) | — | 180 nm/min (with CHF3/SF6/H2 chemistry, smooth process); 190 nm/min (with CHF3/SF6 chemistry, APS_Si3N4_Smooth process)[3] |
| Selectivity (SiO2 to PR mask) | — | 4:1[3] |
| Selectivity (Si3N4 to PR mask) | — | >2.5:1 (smooth process); >1.5:1 (APS process)[3] |
| Process type | — | ICP-based high density plasma source[3] |
| Etch rate for SiO2 (PR mask, process 00_CMi_SiO2_PR) | — | 320 nm/min[3] |
| Selectivity SiO2 to PR (process 00_CMi_SiO2_PR) | — | 4:1[3] |
| Etch rate for Si3N4 (smooth process) | — | 190 nm/min[3] |
| Selectivity Si3N4 to PR (smooth process) | — | >1.5:1[3] |
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