Comparison ledger
Applied Materials 0010-18024 Pyrometer Assembly, Hitachi S 9300, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-18024 Pyrometer AssemblyApplied Materials | S 9300Hitachi |
|---|---|---|
| OEM | Applied Materials | Hitachi |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-18024 Pyrometer Assembly | Hitachi S 9300 |
| Specifications | ||
| Configuration | Capable of working on Applied Materials Radiance[1] | — |
| Model | — | S-9300[2] |
| Type | — | Scanning Electron Microscope (SEM)[2] |
| Year of manufacture | — | 09-1999[3] |
| Wafer Size | — | 200mm & 300mm[3] |
| Serial number | — | 0301-03[3] |
| Power requirement | — | 6kVA Single Phase[3] |
| Components | — | Main unit, Supply unit, Control unit[3] |
| Vintage | — | 1996[2] |
| Wafer Size (CD SEM specification) | — | 200mm[4] |
| Wafer Imaging | — | X coverage from 5 – 295mm, Y coverage from 5 – 195mm[4] |
| Electron Gun | — | Schottky emission source[4] |
| Accelerating voltage | — | 500V to 1600V, 10V steps[4] |
| Field of view | — | 1.2mm[4] |
| Probe Current | — | 4~24pA with automated setting and measurement by Faraday cup[4] |
| Electromagnetic Lens | — | 3-Stage Electromagnetic Lens with boosting voltage[4] |
| Objective Lens | — | 4 opening click stop, heated aperture is selectable/adjustable outside the vacuum[4] |
| Scan Coil | — | 2-Stage Electromagnetic Deflection[4] |
| Astigmatism correction | — | via 8-pole electromagnetic coil[4] |
| Magnification | — | 1000x to >300000x[4] |
| Field control method | — | Continuously on for sample decharging at all voltages[4] |
| Wafer imaging ability | — | Entire surface of 8” or 12” wafer[4] |
| Depth of focus | — | ≥ 1.0um at 80000x magnification[4] |
| Resolution | — | 3nm (800V) Retarding/Boosting Mode[4] |
| Chemicals Used | — | Nitrogen, Oil free Air (OFA), PCW Glycol[4] |
| Workstation Model | — | HP B180L (9GB)[4] |
| Operating System | — | Unix version HP-UX 10.20 or newer[4] |
| Software Version | — | 14.71 or newer[4] |
| SECS/GEM Communication Interface | — | Yes[4] |
| Dual XY Hitachi Microscale | — | Yes[4] |
| DSP Image Processing | — | Yes[4] |
| BSE Mode | — | Yes[4] |
| Multipoint Measurement Function | — | Yes[4] |
| Edge Roughness Function | — | Yes[4] |
| Automated Image Archiving Function | — | Yes[4] |
| Wafer Handling System | — | 200mm Wafer Handling System, (2) Cassette holders with ergo flippers, Convertible to 300mm with conversion kit[4] |
| Optical Microscope System | — | Monochrome Image using CCD camera, 110x Magnification[4] |
| Equipment type | — | Scanning Electron Microscope[2] |
| System type | — | CD-SEM system[5] |
| Wafer size | — | 200mm and 300mm[3] |
| Workstation | — | HP B180L (9GB)[4] |
| Control system OS | — | Unix version HP-UX 10.20 or newer[4] |
| Depth of Focus | — | ≥1.0µm at 80000x magnification[4] |
| Wafer Handling | — | 200mm cassette holders with ergo flippers; convertible to 300mm with conversion kit[4] |
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