Comparison ledger
Applied Materials 0010 47763, Tegal 901, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 901Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 901 |
| Specifications | ||
| Configuration | 2nd Source New[1] | Poly[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Wafer size | — | 3 inch, 100 mm to 150 mm[6] |
| Primary process | — | non-critical silicon nitride and photoresist trim[6] |
| Reactor type | — | wide gap RF diode reactor[6] |
| Temperature regime | — | low temperature plasma etch[6] |
| Wafer handling | — | no wafer clamps or electrostatic chucks[6] |
| Additional process | — | poly etching[4] |
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