Comparison ledger
Applied Materials 0020 17484 Part, Plasma-Therm 790, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 17484 PartApplied Materials | 790Plasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 17484 Part | Plasma-Therm 790 |
| Cited variants | — | |
| Specifications | ||
| Configuration | Bar, Cap Bank, Hdpcvd 300mm Ultima X[5] | — |
| Tool name | — | PECVD 1 (PlasmaTherm 790)[6] |
| System type | — | open-load etch and deposition systems[1] |
| Series reference | — | formerly Plasma-Therm 790+ series[1] |
| Process type | — | PECVD[6] |
| Category | — | Chemical Vapor Deposition (CVD)[6] |
| Archived series reference | — | formerly Plasma-Therm 790+ series open-load etch and deposition systems[1] |
| Tool list designation | — | PECVD 1 (PlasmaTherm 790)[6] |
| Gas distribution | — | showerhead gas distribution[2] |
| Platen | — | water cooled RF platen[2] |
| Maximum wafer diameter | — | 200 mm (8 in.)[7] |
| Platen size | — | 279 mm[7] |
| RF power | — | 500 W, 13.56 MHz[2] |
| RF power range | — | up to 500 W at 13.56 MHz[4] |
| Pressure range | — | 10 mTorr to 100 mTorr[2] |
| Process gases | — | CF4, CHF3, SF6, and O2[2] |
| Material compatibility | — | silicon, silicon dioxide, or silicon nitride[2] |
| Supported sample size | — | 200 mm maximum wafer diameter[4] |
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