Waferpedia

Comparison ledger

0041-39086 ESC PartversusPlasmalab 100 ICP-RIE

Applied Materials 0041-39086 ESC Part, Oxford Instruments Plasmalab 100 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0041-39086 ESC PartApplied Materials
Plasmalab 100 ICP-RIEOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Oxford Instruments Plasmalab 100
Specifications
Process gases used—H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[1]
Cryo Table w/ operating temp—-150 to 400C[1]
Substrate cooling—using liquid nitrogen (LN2)[1]
Configuration—RF source 300 W, 13.56 MHz[1]
Base pressure—5E-7 Torr[1]
Main Chamber Backing Pump—Adixen ADP 122P Dry pump[1]
Main Chamber Turbo Pump—Adixen ATH 1300 Turbo[1]
Load Lock—Adixen ACP 15G Dry pump[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]inventory listing