Oxford Instruments
Plasmalab 100 ICP-RIE
Plate 01Oxford Plasmalab 100 ICP Etcher (ID# 3811)
ClassOneEngineeringWatch on YouTubePlate 02Oxford Plasmalab 100 ICP Etcher (ID# 3811)
ClassOneEngineeringWatch on YouTubePlate 03Oxford Plasmalab 100 ICP (ID# 3894)
ClassOneEngineeringWatch on YouTubePlate 04Video 1 Oxford Plasmalab 100 ICP System ID# 3589
TechnolutionsWatch on YouTube
Power
RF source 300 W, 13.56 MHz[1]
Vacuum
-150 to 400C[1]
Gas delivery
All Non-corrosive gas lines cleaned[1]
Optics
Horiba Laser Endpoint Detector[1]
What it is
General reference — not yet source-verifiedAn ICP-RIE etcher is a plasma dry-etch tool used to remove material from a wafer with reactive gases and ion bombardment under vacuum. ICP-RIE systems are generally used when a process needs anisotropic profile control together with independent control of plasma density and substrate bias.
How it works
The Plasmalab 100 ICP-RIE uses an RF source rated at 300 W at 13.56 MHz and an ICP source rated at 3000 W at 13.56 MHz. The Plasmalab 100 ICP-RIE has a base pressure of 5E-7 Torr. The Plasmalab 100 ICP-RIE is load locked. The Plasmalab 100 ICP-RIE includes a Horiba laser endpoint detector. The Plasmalab 100 ICP-RIE uses process gases H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2, and BCl3. The Plasmalab 100 ICP-RIE has a cryo table with an operating temperature range of -150 to 400C. The Plasmalab 100 ICP-RIE uses liquid nitrogen for substrate cooling. The main chamber backing pump is an Adixen ADP 122P dry pump. The main chamber turbo pump is an Adixen ATH 1300 turbo pump. The load lock uses an Adixen ACP 15G dry pump.[1][3][4]
Where it fits in the process flow
General reference — not yet source-verifiedPlasma etchers are typically placed after lithography and pattern transfer preparation, once a masking layer is present on the wafer. Plasma etchers are typically followed by resist stripping, residue removal, inspection, or subsequent deposition steps depending on the integration sequence.
Applications
General reference — not yet source-verifiedICP-RIE systems are generally used for pattern transfer in films that require dry etching with directional control. ICP-RIE systems are commonly applied in compound semiconductor, dielectric, silicon, and hard-mask development work where process engineers need to balance etch rate, selectivity, and sidewall shape.
What do the numbers mean?
Power & electrical4
Vacuum & pumping9
Wafer handling5
Gas & chemistry4
Optics & imaging2
- Horiba Laser Endpoint Detector[1]
Configuration & options5
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Process gases usedH2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[1]
- Cryo Table w/ operating temp-150 to 400C[1]
- ConfigurationRF source 300 W, 13.56 MHz[1]
- ConfigurationICP source 3000 W, 13.56 MHz[1]
- Base pressure5E-7 Torr[1]
- Main Chamber Backing PumpAdixen ADP 122P Dry pump[1]
- Main Chamber Turbo PumpAdixen ATH 1300 Turbo[1]
- Load LockAdixen ACP 15G Dry pump[1]
- ConfigurationAll corrosive gas lines replaced with brand new[1]
- ConfigurationAll Non-corrosive gas lines cleaned[1]
- ConfigurationVacuum pumps professionally rebuilt[1]
- ConfigurationTurbo pump professionally rebuilt[1]
- Process gases usedH2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2, BCl3[1]
- Cryo Table operating temperature-150 to 400C[1]
- RF source300 W, 13.56 MHz[1]
- ICP source3000 W, 13.56 MHz[1]
- Load lock pumpAdixen ACP 15G Dry pump[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What type of tool is the Oxford Instruments Plasmalab 100 ICP-RIE?
The Oxford Instruments Plasmalab 100 ICP-RIE is an inductively coupled plasma reactive ion etch system.[4][1][3]
Not publicly documented
The following facts about the Plasmalab 100 ICP-RIE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 100 ICP-RIE are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab 100 ICP-RIE are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Plasmalab 100 ICP-RIE are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Plasmalab 100 ICP-RIE are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Plasmalab 100 ICP-RIE is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]Inventory photo
- [3]classoneequipment.com — classoneequipment.comclassoneequipment.com
- [4]Plasmalab 100 ICP-RIE — Oxford Instruments | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
Last updated Oct 16, 2026.
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