Comparison ledger
Applied Materials Centura 5200 Dry, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 DryApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 50/60 Hz[2] | — |
| Voltage | 208V[2] | — |
| Process type | Dry etching[2] | — |
| Wafer size | 8 inch[2] | — |
| Wafer size (version) | 200 mm[3] | — |
| Electrical: frequency | 50/60 Hz[2] | — |
| Electrical: voltage | 208V[2] | — |
| Electrical: current | 240A[2] | — |
| Chamber configuration | 2 Chamber dps Metal, 2 Chamber asp+[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →