Comparison ledger
Applied Materials Centura DPS 2 Poly Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura DPS 2 Poly DryApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura DPS | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 300mm DPS Metal chamber with 200mm ESC[1] | — |
| Mainframe | 300mm[2] | — |
| Gas | O2, CHF3, Ar, CF4, O2/He, He, N2, HBr, CL2, NF3[2] | — |
| OS | Windows NT[2] | — |
| Missing | 23.11.08 1 LL off line[2] | — |
| Manufacturer | Applied Materials[2] | — |
| Model | Centura DPS 2[2] | — |
| Tool type | Poly Dry Etcher[2] | — |
| Back end process | metal etch[2] | — |
| Control system OS | Windows NT[2] | — |
| Missing note | 23.11.08 1 LL off line[2] | — |
| Vintage | 2001[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →