Comparison ledger
Applied Materials Centura I DPS Poly, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura I DPS PolyApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2x DPS Poly Chambers[2] | — |
| Phase | 3 Phase[2] | — |
| Voltage | 208 Vac[2] | — |
| Wafer Size | 8 inch[2] | — |
| Chambers | 2x DPS Poly Chambers[2] | — |
| RF Generators | Advanced Energy RF 5S and RF 20 RWC 2000[2] | — |
| Power | 3 Phase, 4 Wire, 208 Vac, 50/60 Hz[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →