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Centura MXP Dryversus110

Applied Materials Centura MXP Dry, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
Centura MXP DryApplied Materials
110Tegal
OEMApplied MaterialsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura MXPTegal 110
Cited variants—
Specifications
2chD/E CH-A/B[2]—
ConfigurationPolymer[2]—
Tool typeDry etcher[3]—
ManufacturerApplied Materials[3]—
Wafer size8 inch[2]—
Chamber configuration2ch D/E CH-A/B[2]—
Process configurationPolymer[2]—
Vintage1996[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com