Comparison ledger
Applied Materials DPS II, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DPS IIApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials DPS | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Configuration | Load port (3)[3] | — |
| OEM | Applied Materials[3] | — |
| Model | DPS II[3] | — |
| Category | Etch[1] | — |
| Wafer size | 12 inch[3] | — |
| Tool class | second-generation 300mm tool[4] | — |
| Process capability | silicon or metal etch[4] | — |
| Scaleability | scaleable for 200mm wafers[4] | — |
| Onboard subsystems | controller, endpoint, and gas panel located onboard the tool[4] | — |
| Footprint | 20 percent smaller than previous 200mm DPS models[4] | — |
| Demonstrated CD uniformity | less than 10nm across a 300mm wafer, including the edge die[4] | — |
| Demonstrated metal etch CD uniformity | less than five-percent from wafer to wafer and chamber to chamber[4] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[2] |
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