Comparison ledger
Applied Materials DPS II CIP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DPS II CIPApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials DPS | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 4x (D4) SILICON DPS II chamber, 12 Gas line (Standard Gas Line)[2] | — |
| Applicable | 2 Chiller[2] | — |
| Not applicable | Scrubber, Dry Pump[2] | — |
| OEM | Applied Materials[2] | — |
| Model | DPS II CIP[2] | — |
| Category | Etch[3] | — |
| Tool type | Etcher[3] | — |
| Chamber | 4x (D4) SILICON DPS II chamber[2] | — |
| Gas line | 12 Gas line (Standard Gas Line)[2] | — |
| Chiller | 2 Chiller applicable[2] | — |
| Scrubber | Not applicable[2] | — |
| Dry pump | Not applicable[2] | — |
| Vintage | 2005[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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