Waferpedia

Comparison ledger

EHP 500versusEHPI 500

Applied Materials EHP 500, Varian EHPI 500, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Ion Implantation, null[1]
Side-by-side comparison of selected equipment models
Attribute
EHP 500Applied Materials
EHPI 500Varian
OEMApplied MaterialsVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials EHP 500Varian EHPI 500
Specifications
ConfigurationMedium Current[1]Medium Current[2]
Wafer Size6 inch[1]—
TypeMedium Current Implanter[1]—
Tool type—Medium current ion implanter[3]
Energy range (single charge, X+)—5 – 260 keV[3]
Energy range (extended)—up to 780 keV[3]
Maximum wafer size—200 mm (8 in)[3]
Minimum feature size—0.18 µm[3]
Throughput—Highest industry throughput among medium current implanters (10% higher maximum throughput than previous E-series)[3]
Upgrade / Extensions—BDM (Beam Drift Monitors)[4]
Consumables at end of lifetime—source electrode[4]
Contamination Known—BF3, ASH 3, PH 3[4]
Energy range—up to 780 keV[3]
Wafer size—up to 200 mm[3]
Throughput increase—10% higher maximum throughput[3]
Manufacturer—Varian[5]
Model—EHPI 500[5]
Equipment type—Implanter[5]
Process class—Medium current ion implanter[2]
Expanded energy range—up to 780 keV[3]
Maximum throughput change—10% higher maximum throughputs[3]
Feature size capability—down to 0.18 micron[3]
Wafer size capability—up to 200mm[3]

Plan your fab

Building a Ion Implantation process? Get a complete equipment list.

Open the fab equipment planner →
Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]web.archive.orgweb.archive.org
  4. [4]inventory listing
  5. [5]Equipment inventory listing
  6. [6]Equipment inventory listing