Comparison ledger
Applied Materials Endura 5500, Perkin Elmer PE 4400, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Endura 5500Applied Materials | PE 4400Perkin Elmer |
|---|---|---|
| OEM | Applied Materials | Perkin Elmer |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1990– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Endura 5500 | Perkin Elmer PE 4400 |
| Cited variants | — | |
| Specifications | ||
| Line Frequency | 50 Hz[5] | — |
| Wafer Shape | SNNF[5] | — |
| Configuration | Main AC Power Intel Hole[5] | Not operational[23] |
| Position 1 | Dura TTN[5] | — |
| Position 1 Process | Durasource TTN[5] | — |
| Position 2 | Aluminum[5] | — |
| Position 2 Process | Durasource AL[5] | — |
| Position 3 | Dura TTN[5] | — |
| Position 3 Process | Durasource TTN[5] | — |
| Position 4 | Aluminum[5] | — |
| Position 4 Process | Durasource AL[5] | — |
| Position A | Pass Thru[5] | — |
| Software | v8.89[10] | — |
| Robot | HP with Fabworx Blade, Wrist, and Arms[10] | — |
| Ch1/ch3 | AICu[10] | — |
| Pedestal | A101[10] | — |
| ChE/ChF | Orient Degas[10] | — |
| Ch1 | Ti[11] | — |
| Ch3 | AICu[11] | — |
| Ch2/Ch4 | TiN[11] | — |
| ChC/ChD | RF PCII[11] | — |
| Ch2/Ch3 | AICuW[12] | — |
| Ch4 | TiN[12] | — |
| ChC | RF PCII[12] | — |
| ChE | Orient Degas[12] | — |
| Ch2 | AICuW[13] | — |
| Voltage | 430 VAC[16] | — |
| Phase | 3 Phase[18] | — |
| Frequency | 60 Hz[19] | — |
| 4 PVD Chambers | 2TiN/1Ti/1Al[20] | — |
| 2 CVD / 3 PVD Chambers | 2TxZ/1Ti/1IMP Ti/1Co[2] | — |
| 5 PVD Chambers | 2TiN/1Ti/1Al/1NiPt[22] | — |
| Wafer Size | 8 inch (200 mm)[5] | — |
| Electrical Configuration | 3 Phase, 3 Wire + Ground, 480 Vac[22] | — |
| Chamber Configuration (example 1) | 5 PVD Chambers: 2 TiN, 1 Ti, 1 Al, 1 NiPt[22] | — |
| Chamber Configuration (example 2) | 2 CVD / 3 PVD Chambers: 2 TxZ, 1 Ti, 1 IMP Ti, 1 Co[2] | — |
| Transfer Chamber Positions (example) | Position 1: Durasource TTN, Position 2: Durasource AL, Position 3: Durasource TTN, Position 4: Durasource AL[5] | — |
| Buffer Chamber Positions (example) | Position A: Pass Thru, Position B: Cooldown, Position C: Durasource TI, Position F: Orienter (Standard Degas)[5] | — |
| System Safety Features | EMO (Turn to Release), GFI on Primary with EMO Shunt Trip, GFI on Secondary, Circuit Breaker 400 A, GFI Trip 50-100 mA, Water Leak Detector, Smoke Detector[5] | — |
| Position B | Cooldown[5] | — |
| Position C | Titanium[5] | — |
| Position C Process | Durasource TI[5] | — |
| Position F | Orienter[5] | — |
| Position F orient Type | Standard Degas with Temp feedback (Gimball Type)[5] | — |
| System EMO Type | Turn to Release[5] | — |
| Primary Side Trip Amperage | 3 P 3 L 208 VAC[5] | — |
| Circuit Breaker on Secondary | 400 A[5] | — |
| GFI Trip Amperage | 50 ~ 100 mA[5] | — |
| Wafer Sizes | 8 inch[5] | — |
| Vintage | 2000[22] | — |
| Chamber Configuration (Transfer Chamber) | Position 1: Dura TTN, Position 2: Aluminum, Position 3: Dura TTN, Position 4: Aluminum[5] | — |
| Buffer Chamber Positions | Pass Thru, Cooldown, Titanium, Orienter (Standard Degas with Temp feedback)[5] | — |
| Chamber Configuration | 2 CVD / 3 PVD Chambers: 2TxZ/1Ti/1IMP Ti/1Co[2] | — |
| Robot Type | VHP[4] | — |
| Application | Liner/Barrier[2] | — |
| Electrical | 3 Phase - 3 Wire + Ground - 60 Hz - 480 Vac[22] | — |
| PVD Chamber Count | 5[4] | — |
| PVD Chamber Types | 2TiN/1Ti/1Al/1NiPt[4] | — |
| Make | — | Perkin Elmer[23] |
| Model | — | PE 4400[23] |
| Equipment type | — | Sputtering System[23] |
| Category | — | Deposition[24] |
| Cathode shape | — | Circular[1] |
| Cathode size | — | 8 inch[1] |
| Cathode port amount | — | 1 to 4[1] |
| Cathode / sputter type | — | RF Magnetron[1] |
| DC power supply | — | 1-5 KW[1] |
| RF power supply | — | 1-2 KW[1] |
| Process gas | — | Argon (200 SCCM) standard[1] |
| Gas lines | — | Up to 3 gas lines, MFC customized[1] |
| Substrate size | — | Small to 6 inch[1] |
| Wafer load | — | Manually load, capable of limited automatic operation[1] |
| Throughput per batch | — | 3 inch wafer, 30 pieces; 4 inch wafer, 13 pieces; 5 inch wafer, 9 pieces; 6 inch wafer, 7 pieces[1] |
| Sputter rate | — | 20 to 500 Angstroms/kw-min depending on model, cathode, process, sputter material, etc.[1] |
| Uniformity capacity | — | ±7%~10%[1] |
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