Comparison ledger
Applied Materials P 5000 Cluster, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P 5000 ClusterApplied Materials | 6540Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P 5000 Cluster | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Chamber A | Metal etch, not usable (needs new chamber)[2] | — |
| Chamber B | Dielectric etch, fully functional[2] | — |
| Chamber C | Polysilicon etch, not functioning, gas flow issues, new helium seals required[2] | — |
| Chamber D | Not used, status unknown[2] | — |
| Configuration | With:[2] | — |
| Wafer size | 4-inch/100mm wafer kit[2] | 100mm – 200mm[1] |
| Chamber Type | Cluster tool with four chambers[3] | — |
| Etch Type (Chambers A, B, C) | Magnetically-Enhanced Reactive Ion Etch (MERIE)[3] | — |
| Endpoint Detection | Optical endpoint detection[3] | — |
| Chamber A Function | Metal etch[2] | — |
| Chamber B Function | Dielectric etch[2] | — |
| Chamber C Function | Polysilicon etch[2] | — |
| Type | — | high-density plasma etch system[4] |
| Reactor | — | HRe reactor / HRe™ reactor[4] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[4] |
| Plasma confinement | — | magnetic plasma confinement[4] |
| Optimized design rule | — | down to 0.13 micron[4] |
| RF power | — | dual-frequency RF power application[1] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
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