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Comparison ledger

PAS5500/80versus1505 G 6 E

ASML PAS5500/80, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMASMLNikon
CategoryLithographyLithography
Wafer size——
Process node500nm—
Introduced——
Production run—1988–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyASML PAS5500/80Nikon 1505
Specifications
Equipment typeASML Stepper[1]—
Resolutiondown to 500 nm[1]650 nm[4]
FunctionAutomatic alignment and exposure of photoresist films[2]—
Wavelength365 nm[2]—
Stage repeatability8 nm[2]—
Overlay45 nm[2]—
Minimum exposure dose40 mJ/cm2[2]—
Intensity400 mW/cm2[2]—
Uniformity<±2%[2]—
Standard substrates4 inch (100 mm) wafers[2]—
Technically configurable wafer sizes6 inch (150 mm) and 8 inch (200 mm) wafers[2]—
Substrate thickness range300 µm – 1000 µm[2]—
Reticle materialUltra-low thermal expansion quartz[2]—
Nominal reticle size6 x 6 inch (152.40 x 152.40 mm)[2]—
Default reticle thickness0.120 inch (3.05 mm)[2]—
Throughput> 95 wafers/hour on 100 mm diameter wafers[2]—
Batch streamingLoad and unload cassettes with 25 wafers at a time[2]—
Configuration—5" reticle[3]
Numerical Aperture—0.54[4]
Reduction—5x[4]
Exposure Field—15 x 15 mm[4]
Alignment Accuracy—130 nm[4]
Wafer Size—4 inch[3]
Light Source—g-line[5]
Introduction Year—1988[4]
NA (Numerical Aperture)—0.54[4]
Make—Nikon[3]
Model—1505 G 6 E[3]
Category—Stepper[3]
Wafer Sizes—4 inch[3]
Exposure type—g-line[4]
NA—0.54[4]
Exposure field—9.3 x 18.8 mm[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]tudelft.nltudelft.nl
  2. [2]tudelft.nltudelft.nl
  3. [3]inventory listing
  4. [4]web.archive.orgweb.archive.org
  5. [5]ece.utoronto.caece.utoronto.ca