Comparison ledger
Axcelis 200 PCU, Axcelis Purion H 200 High Current, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | Purion H 200 High CurrentAxcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Axcelis Purion H 200 High Current |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | — |
| Phase | 3 Phase[3] | — |
| Voltage | 400 V[3] | — |
| Manufacturer | — | Axcelis[4] |
| Model | — | Purion H 200[4] |
| Tool type | — | High Current Implanter[4] |
| Wafer size | — | 12 inch[4] |
| Tool description | — | single wafer high current implanter[5] |
| Maximum single charge energy range | — | up to 230 keV[5] |
| Maximum accel voltage | — | 170 kV[5] |
| High-current beamline capability | — | greater than 20 mA of beam currents[5] |
| Wafer sizes | — | 12 inch; 6 inch; 200 mm; 150 mm; 300 mm[5] |
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