Comparison ledger
Axcelis NV GSD VHE, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD VHEAxcelis | 160 XPVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | Wafer tilt | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD VHE | Varian 160 XP |
| Cited variants | — |
|
| Specifications | ||
| Wheel type | Full disk 17 wafers[2] | — |
| Wafer size | Wafer tilt[2] | — |
| Source | Bernas[2] | — |
| Extraction system | Triple axes[2] | — |
| Gases | Arsenic, Boron, Phosphine (SDS), all bottles removed. There is also present plumbing for one Xe bottle.[2] | — |
| Configuration | SDS Gas box[2] | — |
| Max implantation energy (in KeV) | 4.2 MeV (14 resonator configuration).[2] | — |
| Max Extraction voltage (in KeV) | 90[2] | — |
| Orienter type | flat[2] | — |
| Hydrogen implantation available | no[2] | — |
| PFS | HD[2] | — |
| Software version | 5.6[3] | — |
| Manufacturer | Axcelis[4] | — |
| Model | NV GSD VHE[4] | — |
| Category | Ion Implantation[4] | — |
| Wafer size / handling | Wafer tilt[4] | — |
| Max implantation energy | 4.2 MeV (14 resonator configuration)[2] | — |
| Max extraction voltage | 90 keV[4] | — |
| High current | For High Current[3] | — |
| Vintage | 2001 Vintage[3] | — |
| Wafer handling | wafer tilt[4] | — |
| Software platform | Sun SparcStation5 with O/S V 3.8.3[2] | — |
| Configuration (160 XP Ion variant) | — | 150mm High Current IMP[1] |
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