Comparison ledger
Blanchard 18 D Surface, Disco DFL7340-stealth-dicer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 18 D SurfaceBlanchard | |
|---|---|---|
| OEM | Blanchard | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | — | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Blanchard 18 D Surface | Disco DFL7340-stealth-dicer |
| Specifications | ||
| Voltage | 416 V[1] | — |
| Phase | 3 Phase[1] | — |
| Cycles | 50[1] | — |
| Control Voltage | 110[1] | — |
| Make | Blanchard[2] | — |
| Model | 18 D[2] | DFL7340[4] |
| Asset # | 153970[1] | — |
| Power | 416 V, 3 phase[2] | — |
| OEM | — | Disco[4] |
| Process area | — | Packaging[4] |
| Compatible materials | — | Dedicated to dicing Si wafers only[4] |
| Laser engine wavelength | — | λ = 1342 nm[4] |
| Maximum sample diameter | — | 200 mm[4] |
| Dicing orientation | — | Topside or backside (through tape) dicing possible[4] |
| Si resistivity requirement | — | ρ > 0.01 Ω•cm[4] |
| Surface roughness requirement | — | Dicing streets must be smooth (mirror polish) on the surface where the laser is incident[4] |
| Street clearance requirement | — | Wafer must be metal-free in a width 0.4 × substrate thickness, centred on the dicing street[4] |
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