Comparison ledger
Canon iW, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | iWCanon | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Canon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon iW | SUSS MicroTec 150 e Mask |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Parts Tool and pcb’s[2] | — |
| OEM | Canon[2] | — |
| Model | iW[2] | — |
| Equipment type | Stepper[2] | — |
| Reticle size | 6" square t=0.25"[1] | — |
| Reticle material | Quartz[1] | — |
| Pattern material | 2 layer Cr, 3 layer Cr[1] | — |
| Pellicle | Frame Pattern Side Only[1] | — |
| Wafer size | 4" thru 8" SEMI Standard, JEIDA, Notch / Flat[1] | — |
| Projection magnification | 1/2 X[1] | — |
| Numerical aperture | 0.24[1] | — |
| Field size | 50X50mm[1] | — |
| Exposure light | i-line (365nm)[1] | — |
| Light source | 2.0KW Super High Pressure Hg Lamp[1] | — |
| Intensity | 2500 W/m 2[1] | — |
| Uniformity | < 1.5%[1] | — |
| Resolution | <0.8µm[1] | — |
| Depth of focus | >4.0µm (0.8µm L&S)[1] | — |
| Image field deviation | <2.5µm[1] | — |
| Distortion | <±0.11µm[1] | — |
| Reticle rotation accuracy | <±0.02µm on wafer[1] | — |
| Reticle rotation repeatability | <0.05µm on wafer[1] | — |
| Wafer alignment | <0.10µm mean + 3sigma[1] | — |
| Focus repeatability | <0.10µm (3sigma)[1] | — |
| Leveling repeatability | <7ppm (3sigma)[1] | — |
| Minimum compensation range | >100ppm[1] | — |
| Step accuracy | <0.05µm (3sigma)[1] | — |
| Scaling | <±1.0ppm[1] | — |
| Orthogonality | <±1.0ppm[1] | — |
| Throughput | >120 wafers/hour Φ6", 50mm, 9 shots; >115 wafers/hour Φ8", 50mm, 14 shots[1] | — |
Plan your fab
Building a Lithography process? Get a complete equipment list.
Open the fab equipment planner →